Design Criterion for SiC BJTs to Avoid ON-Characteristics Degradation Due to Base Spreading Resistance

作者：Asada Satoshi^*; Kimoto Tsunenobu; Suda Jun

来源：IEEE Transactions on Electron Devices, 2017, 64(5): 2086-2091.

DOI：10.1109/TED.2017.2684181

• Base spreading resistance equivalent circuit model
• parasitic diode

It is empirically known that the ON-resistance (voltage) of the SiC bipolar junction transistors (BJTs) with a thin-base layer is prone to be larger than the resistance of a voltage-blocking collector layer. In this paper, we explain the mechanism of this degradation of ON-characteristics by focusingon a high basespreading resistance and a parasitic diode existing below the base contact. An equivalent circuit model of the SiC BJT was proposed, and SPICE simulation was performed. In addition, TCAD simulation confirmed the validity of the model well. Based on the model, a design criterion to avoid the unwanted increase of the ON-resistance is proposed.

• 出版日期2017-5