Magnetic and electrical properties of zincblende CrAs

作者：Chen Peng^*; Takamura K

来源：Chinese Physics B, 2008, 17(6): 2204-2207.

• zincblende
• molecular-beam epitaxy
• half-metal

This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 +/- 0.15 mu(B) per CrAs unit. The temperature dependence of zb-CrAs resistance R shows metallic behaviour.

• 出版日期2008-6
• 单位西南大学