Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source

作者：Hasumi Masahiko; Nakamura Tomohiko; Yoshidomi Shinya; Sameshima Toshiyuki^*

来源：Japanese Journal of Applied Physics, 2014, 53(5): 05FV05.

DOI：10.7567/JJAP.53.05FV05

We report the activation of silicon implanted with phosphorus and boron atoms by microwave annealing using carbon powder as a heat source. Silicon substrates were covered with carbon powder and then irradiated with 2.45GHz microwaves using a commercial microwave oven. Carbon powder effectively absorbs microwaves and heats itself at 1000 degrees C. Silicon substrates are heated by thermal conduction. We carried out implantations of phosphorus atoms at a concentration of 1.0 x 10(15)cm(-2) at 75 keV and boron atoms at a concentration of 1.0 x 10(15)cm(-2) at 25 keV for p- and n-type silicon substrates, respectively. Microwave annealing at 1000W for 120 s achieved sheet resistivities of 140 and 85 Omega/sq for the phosphorus-and boron-implanted samples, respectively. It also realized the recrystallization of surface amorphized regions caused by implantation. Moreover, low surface recombination velocities of 3.8 x 10(2) and 2.7 x 10(2)cm/s were obtained at the top implanted surfaces for the phosphorus-and boron-implanted samples, respectively. Typical diode rectified characteristics and solar cell characteristics with a conversion efficiency of 10.1% were successfully obtained.

• 出版日期2014-5