Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

作者：Franke Sebastian^*; Baumkoetter Matthias; Monka Carsten; Raabe Sebastian; Caspary Reinhard; Johannes Hans Hermann; Kowalsky Wolfgang; Beck Sebastian; Pucci Annemarie; Gargouri Hassan

来源：Journal of Vacuum Science and Technology A, 2017, 35(1): 01B117.

DOI：10.1116/1.4971173

Alumina layers were grown from trimethylaluminum (TMA) and water, ozone as well as an oxygen plasma as co-reactants in low temperature spatial atomic layer deposition (ALD). The influence of the amount of precursor, the precursor exposure duration, and substrate temperature were investigated with respect to the growth rate while employing different oxygen sources. The TMA/water process provided alumina (AlOx) films with superb film quality as shown by infrared measurements. Ozone-based processes allowed lower substrate temperatures. Nevertheless, carbon residuals in different binding states were found within the bulk material. However, the carbon impurities have no impact on the barrier performance, since 50 nm AlOx grown by TMA either with water or ozone exhibited a water vapor transition rate in the range of 10(-6) g/m(2)/day. However, when our home-built microwave plasma source was applied in a remote configuration, the water vapor transition rate was one order of magnitude higher due to a reduction in film quality. Furthermore, a TMA utilization of similar to 50% demonstrated the highly cost-effective spatial ALD concept as a deposition technique which is very suitable for industrial deposition applications.

• 出版日期2017-2