Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET

作者：Hung, Shang-Chao; Luan, Qiuping; Lin, Hau-Yu; Li, Shuguang; Chang, Shoou-Jinn^*

来源：Current Applied Physics, 2013, 13(8): 1577-1580.

DOI：10.1016/j.cap.2013.05.017

• III-V
• InGaAs MESFET
• Heterostructure
• Embedded-Ge S/D

We report the first demonstration of n-type III-V metal-semiconductor field-effect transistors (nMESFETs) with IV group material hetero-junction source and drain (S/D) technology. A selective epitaxial growth of germanium (Ge) in the recessed gallium arsenide (GaAs) S/D regions is successfully developed using ultra-high vacuum chemical vapor deposition (UHVCVD) system. The dual channel structure includes an additional 10-nm higher mobility n-In0.2Ga0.8As layer on n-GaAs channel and is introduced to further improve the device performance. The n-MESFET, combining embedded-Ge S/D with In0.2Ga0.8As/GaAs channel, exhibits good transfer properties with a drain current on/off ratio of approximately 10(3). Due to the small barrier height of Ti/In0.2Ga0.8As Schottky contact, a lattice-matched wide bandgap In0.49Ga0.51P dielectric layer is also integrated into the device architecture to build a higher electron Schottky barrier height (SBH) for gate leakage current reduction. The Ti/In0.49Ga0.51P/n-In0.2Ga0.8As Schottky diode shows a comparable leakage level to Ti/n-GaAs with 2 x 10(-2) A/cm(2) at a gate voltage of -2.0 V.

• 出版日期2013-10
• 单位中国石油大学（华东）