摘要

In this paper an approach to analysis of responsivity of MOSFET-based detectors of THz radiation has been presented. The authors have analyzed the substrate modes that affect performance of antennas that are always used as a part of detecting structures, and should be accounted for by proper choice of the substrate geometry. Then, a methodology to combine extracted properties of an arbitrary antenna with properties of the transistor channel has been described and employed to estimate responsivity of a detector built of a particular MOSFET integrated with several antenna structures. Finally, example detectors were fabricated and measured using sub-THz radiation sources operating in the combined bandwidth 220-360 GHz. Measurement results were compared with predictions which lead to conclusions on possible levels of the impedance of the transistor channel at these frequencies.

  • 出版日期2014-9