Dynamic Modeling of Radiation-Induced State Changes in HfO2/Hf 1T1R RRAM

作者：Bennett William G^*; Hooten Nicholas C; Schrimpf Ronald D; Reed Robert A; Alles Michael L; Zhang En Xia; Weeden Wright Stephanie L; Linten Dimitri; Jurczak Malgorzata; Fantini Andrea

来源：IEEE Transactions on Nuclear Science, 2014, 61(6): 3497-3503.

DOI：10.1109/TNS.2014.2365493

• Dynamic random access memory (DRAM)
• multiple-event upset (MEU)
• nonvolatile memory (NVM)
• one transistor
• one resistor (1T1R)
• radiation effects
• resistive random access memory (RRAM)
• single-event upset (SEU)
• static random access memory (SRAM)

Single and multiple-event upsets in HfO2/Hf one transistor, one resistor (1T1R) resistive random access memory (RRAM) structures are modeled dynamically using 3-D technology computer-aided design (TCAD) simulations. A dynamic single-event compact model is presented that allows direct correlation of the ion-generated voltage transient across the RRAM and the change in RRAM resistance. Experiments and modeling demonstrate an exponential relationship between the susceptibility of the RRAM and the applied voltage. Two implementations of the model are also presented including hardening voltage-susceptible resistive memory technologies and the impact of highly scaled access transistors.

• 出版日期2014-12