摘要

Zinc oxide (ZnO) thin films were grown on sapphire substrates at different deposition temperatures by pulsed laser deposition (PLD). The structure, composition and optical properties of deposited thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra. The results show that the ZnO thin films deposited at 500 degrees C have the best crystalline quality with hexagonal structure, surface morphology and stoichiometric composition. The PL spectrum reveals that the sample possesses the strongest ultraviolet (UV) emission at 370 nm and the weakest blue emission at 459 nm under this condition. Raman spectra and weak blue emission of PL spectra show that very few oxygen vacancies exist in the ZnO thin films.