An Analytic Model for Ge/Si Core/Shell Nanowire MOSFETs Considering Drift-Diffusion and Ballistic Transport

作者：Zhang Lining^*; He Jin; Zhang Jian; Liu Feng; Fu Yue; Song Yan; Zhang Xing

来源：10th International Symposium on Quality Electronic Design, 2009-03-16 To 2009-03-18.

DOI：10.1109/isqed.2009.4810359

In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantum-mechanical effect through modifying the intrinsic carrier concentration under 2-dimensional confinement. With the proposed model, the performances of Ge/Si core/shell NWFETs are analyzed and significant characteristics are demonstrated in details. The analytic model in this paper provides a framework for further developing compact models of the NWFETs with Ge/Si core/shell heterostructure for circuit design and simulation.

• 出版日期2009
• 单位北京大学深圳研究生院