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摘要
In this paper we present a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-flat doping profile. For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential decay rate is also derived. Moreover we allow that the two pressure functions can be different.
- 出版日期2012-9
