摘要

(Pb1-xBax)ZrO3 (PBZ) (0 <= x <= 0.5) thin films were successfully fabricated on Pt(111)/TiO2/SiO2/Si substrates by the sol-gel technique, and the influence of the Ba2+ content on the microstructure, electrical properties, and phase transformation behavior of PBZ films was investigated in detail. With the increase in Ba2+ concentration, the orientation of the PBZ films was changed from (111) to (110) gradually. Simultaneously the grain size of the films decreased, and the surface became more and more homogeneous and uniform. The room-temperature state of PBZ thin films experienced a transformation from an antiferroelectric to a ferroelectric phase and then to a paraelectric phase with the increase in Ba2+ content. The typical ferroelectric relaxor behavior was observed due to the Ba2+ substitution, and the degree of the relaxor behavior was enhanced with the increase in Ba2+ content.