Nonlinear refraction effects of amorphous semiconductor InSe thin films according to film thicknesses and/or pulse durations

作者：Yuksek Mustafa^*

来源：Optics Communications, 2012, 285(24): 5472-5474.

DOI：10.1016/j.optcom.2012.08.066

• Nonlinear refraction
• InSe thin films
• Z-scan experiment
• Thin film thicknesses
• Pulse durations

The amorphous semiconductor InSe thin films were deposited by the thermal evaporation method. The nonlinear refraction index behaviors of amorphous semiconductor InSe thin films were investigated with closed aperture Z-scan experiments by using laser sources which have nanosecond, picosecond and femtosecond pulse durations. The results of closed aperture Z-scan experiments have showed that nonlinear refraction index varied with film thicknesses and/or pulse durations of pump laser. By increasing the film thicknesses, the sign of nonlinear refraction indexes of amorphous semiconductor InSe thin films has changed from negative to positive under nanosecond and picosecond pulse durations excitations, while under femtosecond pulse duration excitation this behavior has not been observed.

• 出版日期2012-11-1