Annealing behavior of ferroelectric Si-doped HfO2 thin films

作者：Lomenzo Patrick D; Takmeel Qanit; Moghaddam Saeed; Nishida Toshikazu

来源：Thin Solid Films, 2016, 615: 139-144.

DOI：10.1016/j.tsf.2016.07.009

• HfO2
• Ferroelectrics
• RTA
• Breakdown behavior

Rapid thermal annealing of 10 nm thick Si-doped HfO2 thin films was performed to study the influence of isochronal and isothermal anneals on the ferroelectric and electrical properties of thin film metal-ferroelectric-metal capacitors. The anneal temperature and time dependence of the ferroelectric Si-doped HfO2 thin films was investigated by applying 700 degrees C-900 degrees C rapid thermal anneals for 5 s-60 s durations. An antiferroelectric-like to ferroelectric transition with increasing anneal temperature is observed in the Si-doped HfO2 thin films. The electrical properties of Si-doped HfO2 thin films exhibit a strong temperature dependence and a significant time dependence for the temporal range studied in this work. The breakdown field in the ferroelectric HfO2 thin films ranges from 3.8-5.3 MV/cm depending on the anneal temperature and atomic layer deposition cycle ratio. The remanent polarization, breakdown field, and leakage current is discussed in the context of the Si-doping, anneal temperature, and anneal time. Dynamic hysteresis currents are used to illustrate specific cases of the cycling behavior for the Si-doped HfO2 thin film capacitors.

• 出版日期2016-9-30