A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated p(+) n GaAs Diodes

作者：Warner Jeffrey H^*; Cress Cory D; Messenger Scott R; Walters Robert J; Ringel Steve A; Park Jeongho

来源：IEEE Transactions on Nuclear Science, 2010, 57(4): 1940-1945.

DOI：10.1109/TNS.2010.2046335

• Deep level transient spectroscopy (DLTS)
• displacement damage
• electron irradiation
• GaAs
• introduction rate
• irradiation
• molecular beam epitaxy (MBE)
• non-ionizing energy loss (NIEL)
• proton irradiation
• recoil spectrum

Defects produced by 0.6 MeV, 1 MeV and 5 MeV electrons are compared with those produced by 2 MeV proton irradiations in p(+) n GaAs diodes using Deep Level Transient Spectroscopy (DLTS). Following 0.6 and 1 MeV electron irradiation, the measured DLTS spectra matched that of the literature. After 5 MeV electron irradiation, however, a new DLTS peak was observed. The new peak is located on the low temperature side of the common E3 peak. This new electron-induced DLTS peak is assigned to be the same peak produced by proton irradiation and commonly labeled PR4 ''. Further analysis of the DLTS data indicate that the PR4 '' peak is independent of the displacement damage dose deposited but is dependent on the primary recoil energy.

• 出版日期2010-8