Acceptors in ZnO

作者：McCluskey Matthew D^*; Corolewski Caleb D; Lv Jinpeng; Tarun Marianne C; Teklemichael Samuel T; Walter Eric D; Norton M Grant; Harrison Kale W; Ha Su

来源：Journal of Applied Physics, 2015, 117(11): 112802.

DOI：10.1063/1.4913827

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g(perpendicular to) = 2.0015 and g(//) = 2.0056, along with an isotropic center at g = 2.0035.

• 出版日期2015-3-21