An SPICE model for phase-change memory simulations

作者：Li Xi^*; Song Zhitang; Cai Daolin; Chen Xiaogang; Chen Houpeng

来源：Chinese Journal of Semiconductors, 2011, 32(9).

DOI：10.1088/1674-4926/32/9/094011

• Crystallinities
• Heat distribution
• Memory cell
• Phase changes
• Physical behaviors
• Programming process
• SPICE model
• Temperature curves
• Threshold switching
• Verilog-A
• Working principles

Along with a series of research works on the physical prototype and properties of the memory cell, an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented. By handling it with the heat distribution algorithm, threshold switching theory and the crystallization kinetic model, the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell. In particular, it can emulate the cell';s temperature curve and crystallinity profile during the programming process, which can enable us to clearly understand the PCM';s working principle and program process.

• 出版日期2011
• 单位信息功能材料国家重点实验室