A novel structure of SOI lateral MOSFET with vertical field plate

作者：Fan Jie^*; Zou Yonggang; Wang Haizhu; Zhao Xin

来源：International Conference on Optoelectronics and Microelectronics (ICOM), 2015-07-16 to 2015-07-18.

• lateral MOSFET
• vertical field plate
• breakdown voltage
• specific on-resistance

A new high voltage silicon-on-insulator (SOI) lateral MOSFET with an enhanced breakdown voltage (BV) and a reduced specific on-resistance (R-on,R-sp) is presented. The structure features a drain vertical field plate and a gate vertical field plate (DTDP SOI). The assisted depletion effect of the dual vertical field plate brings two benefits. Firstly, the distribution of electric field in the drift region is modulated and the average electric field strength is enhanced, resulting in the improvement in BV. Secondly, the optimal doping concentration of drift region is significantly increased, which reduces the R-on,R-sp significantly by reducing the resistance of the drift region in the on-state. The mechanism of the dual vertical field plate is analyzed and the characteristics of BV and R-on,R-sp are discussed. It is shown that the BV of the DTDP SOI increases from 345 V of the dual trench lateral MOSFET and 152 V of the conventional lateral MOSFET to 485 V, and the highest figure of merit is obtained for the DTDP SOI in the three structures due to its low R-on,R-sp.

• 出版日期2015
• 单位长春理工大学