Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

作者：Kim Ki Seok; Oh Il Kwon; Jung Hanearl; Kim Hyungjun; Yeom Geun Young^*; Kim Kyong Nam^*

来源：Applied Physics Letters, 2016, 108(21): 213102.

DOI：10.1063/1.4950997

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (< 10(-11) A/cm(2)) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current. Published by AIP Publishing.

• 出版日期2016-5-23