科研之友
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摘要
The screening of an impurity ion in diamond by both the holes hopping via boron atoms in charge states (0) and (-1) and the holes of the valence band is calculated in the Debye-Huckel approximation. It is shown that a decrease of the ionized boron atom affinity to valence band hole is determined by its screening. An expression for the dependence of differential thermal ionization energy E-1 of boron atoms on their concentration N is obtained in the quasiclassical approximation. Calculated dependence of valence band hole concentration p on N agrees with known experimental data, when the contribution of hopping conductivity to Hall effect may be neglected. A probability density function of the impurity ions and the valence band holds distribution over the crystal is assumed to be Poisson-line while their electrostatic potential energy distribution is taken to be normal. The calculations of E-1(N) and the critical concentrations of boron atoms N = N-M for the insulator-metal phase transition (Mott transition) at different compensation rations are compared with experimental data.
- 出版日期2009-1
