Distributed Signal and Noise Modeling of Millimeter Wave Transistor Based on CMOS Technology

作者：Seifi Z^*; Abdipour A; Mirzavand R

来源：Applied Computational Electromagnetics Society Journal, 2015, 30(8): 915-921.

• Cadence
• CMOS transistor
• coupled active transmission line
• distributed transmission line model
• lumped MOSFET model
• millimeter wave

This paper presents a complete distributed transmission line signal and noise modeling of millimeter wave CMOS transistor. In this model, the MOSFET transistor is considered as a three-coupled active transmission line structure, exciting by the noise equivalent sources distributed on its conductors. According to the transmission line theory, closed form expressions of the signal and noise parameters for a high frequency CMOS transistor are derived as the function of device width. By using the proposed model, the scattering and noise parameters of a 130 nm MOSFET are computed over a frequency range up to 100 GHz. The results obtained by this approach is compared with the lumped elements model and verified by the simulation results of Cadence SpectreRF simulator.

• 出版日期2015-8