摘要

A simplified model for bubble growth was developed according to qualitative analysis of temperature profile in the thermal boundary layer of the vapor bubble. The model is based on the study of one-dimensional bubble growth model under the superheated conditions. The model is validated by the experimental data of vapor bubble growth in the superheated water and the numerical solution of dimethyl ether (DME) vapor bubble growth using the one-dimensional bubble growth model respectively. Comparison shows that the model gives good accuracy and reduced computational cost than those of one-dimensional bubble growth model. Using the model, the DME bubble growth is simulated under the superheated conditions. The result shows that surface tension plays an important role in the controlled domain of surface tension for bubble growth, and heat transfer controlled domain of bubble growth is controlled by thermal diffusivity while in the transition domain both surface tension and thermal diffusivity influence the bubble growth.

  • 出版日期2012

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