Multi-Terminal Superconducting Nonequilibrium Device With a Ferromagnetic Screen

作者：Nevirkovets I P^*; Chernyashevskyy O; Ketterson J B; Pan A V

来源：IEEE Transactions on Applied Superconductivity, 2011, 21(3): 721-723.

DOI：10.1109/TASC.2010.2084551

• Ferromagnet-superconductor structures
• nonequilibrium superconductivity
• proximity effect
• superconducting transistors
• superconductor-insulator-superconductor devices
• tunneling

We have fabricated and characterized double-barrier multi-terminal superconducting transistor-like devices with the Nb/Al/AlO(x)/Al/Nb/Ni/Al/AlO(x)/Al/Nb (S(1)IS(2)FIS(3)) structure, where S, I, and F refer to superconducting, insulating, and ferromagnetic layers, respectively. A thin ferromagnetic Ni layer screens the superconductivity of the middle Nb layer on the injector-barrier side, so that the Nb/Ni bilayer manifests itself as a superconductor in the current-voltage characteristic (I - V curve) of the acceptor S(1)IS(2) junction, but as a normal metal in the I - V curve of the injector S(2)FIS(3) junction. It is shown that this property allows for considerable improvement of the input-output isolation of the quasiparticle-injection devices as compared with that for the formerly reported quiteron.

• 出版日期2011-6
• 单位西北大学