A ternary compound additive for vacuum densification of beta-silicon carbide at low temperature

作者：Lee Jin Seok^*; Lee Sea Hoon; Nishimura Toshiyuki; Hirosaki Naoto; Tanaka Hidehiko

来源：Journal of the European Ceramic Society, 2009, 29(16): 3419-3423.

DOI：10.1016/j.jeurceramsoc.2009.07.011

• Carbides
• SiC
• Powders-solid state reaction
• Sintering
• Al(4)SiC(4)

The thermal decomposition behavior of a ternary carbide compound (Al(4)SiC(4)) was investigated under vacuum conditions. Decomposition of Al(4)SiC(4) occurred above 1450 degrees C, resulting in the formation of SiC and carbon phases in the matrix, with some losses of Al. To simultaneously obtain the densification and refinement of SiC, the potential of the compound as a sintering additive for low-temperature sintering of SiC was evaluated and compared to cases of SiC with Al(4)C(3) and Al(2)O(3) additives. SiC that was almost entirely densified with fine and elongated grains was successfully formed using a 10 wt% Al(4)SiC(4) additive by hot pressing at 1700 degrees C for 2 It in a vacuum. During the densification, the decomposition behavior of the Al(4)SiC(4) was strongly related to the densification behavior of the SiC.

• 出版日期2009-12-15