科研之友
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摘要
The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R-s-mu diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.
- 出版日期2010-12-3
