科研之友
微信
新浪微博
Facebook
分享链接
摘要
In this paper, we demonstrate a modified coarse-fine alignment scheme designed for proximity lithography. Both wafer alignment mark and mask alignment mark consists of linear grating arrays and "+" bar. Coarse alignment and fine alignment could work together to achieve the perfect alignment. Thereinto, coarse alignment, measured from two superposed "+" bars, guarantees the misalignment across wafer and mask within the measurement range of fine alignment, which is based on moire fringes formed by the superposition of linear grating arrays. Then we conduct the experiments using a nanometer actuator to drive the wafer alignment mark meanwhile keeping the mask alignment mark motionless, which validates the feasibility and rationality of our designed scheme.
- 出版日期2014
- 单位中国科学院光电技术研究所; 电子科技大学; 中国科学院大学
