Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors

作者：Liu, Kuan Ju; Chang, Ting Chang^*; Lin, Chien Yu; Chen, Ching En; Tsai, Jyun Yu; Lu, Ying Hsin; Liu, Hsi Wen; Cheng, O**ert; Huang, Cheng Tung

来源：ECS Journal of Solid State Science and Technology, 2016, 5(6): Q155-Q159.

DOI：10.1149/2.0121606jss

This work demonstrates an abnormal transconductance (GM) enhancement after positive bias stress (PBS) in n-channel high-k/metal gate stacked fin-field-effect-transistors. This abnormal GM enhancement is observed only in short channel devices. With the speculation that hole-trapping-induced electron accumulation is the dominant mechanism, PBS with floating source and drain is adopted as an investigative approach. This, together with the electric field simulation, verifies that hole-trapping in the HfO2 and SiN near the gate corner induces electron accumulated at the ends of the channel length. Such a phenomenon results in a shortening of effective channel length and further GM enhancement.

• 出版日期2016
• 单位中山大学