A Single-Chip Dual-Band 22-29-GHz/77-81-GHz BiCMOS Transceiver for Automotive Radars

作者：Jain Vipul^*; Tzeng Fred; Zhou Lei; Heydari Payam

来源：IEEE Journal of Solid-State Circuits, 2009, 44(12): 3469-3485.

DOI：10.1109/JSSC.2009.2032583

• Millimeter-wave integrated circuits
• automotive radar
• pulsed radar
• direct-conversion receiver
• direct-conversion transmitter
• frequency conversion
• phase locked loops
• frequency synthesizers
• injection-locked oscillators
• dual-band
• 24 GHz
• 77 GHz
• 79 GHz
• pulse generator

Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22-29-GHz and 77-81-GHz short-range automotive radar bands is designed and implemented in 0.18-mu m SiGe BiCMOS technology with f(T)/f(max) of 200/180 GHz. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed highly-programmable baseband pulse generator. The transceiver achieves 35/31-dB receive gain, 4.5/8-dB double side-band noise figure, >60/30-dB cross-band isolation, -114/-100.4-dBc/Hz phase noise at 1-MHz offset, and 14.5/10.5-dBm transmit power in the 24/79-GHz bands. Radar functionality is also demonstrated using a loopback measurement. The 3.9 1.9-mm(2) 24/79-GHz transceiver chip consumes 0.51/0.615 W.

• 出版日期2009-12