Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

作者：Rogers D J^*; Teherani F Hosseini; Ougazzaden A; Gautier S; Divay L; Lusson A; Durand O; Wyczisk F; Garry G; Monteiro T; Correira M R; Peres M; Neves A; McGrouther D; Chapman J N; Razeghi M

来源：Applied Physics Letters, 2007, 91(7): 071120.

DOI：10.1063/1.2770655

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnO/c-Al2O3 using low temperature/pressure MOVPE with N-2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

• 出版日期2007-8-13
• 单位西北大学