DSS MOSFET With Tunable SDE Regions by Fluorine Pre-Silicidation Ion Implant

作者：Vega Reinaldo A^*; Liu Tsu Jae King

来源：IEEE Electron Device Letters, 2010, 31(8): 785-787.

DOI：10.1109/LED.2010.2050762

• Dopant segregation
• fluorine
• metallic source/drain (MSD)
• NiSi
• Schottky barrier (SB)

Fluorine pre-silicidation ion implant (F-PSII) is shown to enable reduction of the lateral source/drain extension junction depth (X(j,SDE)) in NiSi dopant-segregated Schottky (DSS) source/drain SOI MOSFETs formed by implant-to-silicide (ITS) with P. F segregation at the NiSi/Si interface reduces the amount of Ni rejection from the NiSi during post-ITS anneal, which reduces the spatial vacancy distribution near the NiSi/Si interface, in turn reducing X(j,SDE) and therefore short channel effects. The leakage floor I(min) and electron Schottky barrier height are also reduced with F-PSII. This finding reveals new opportunities for single silicide DSS CMOS, whereby DSS MOSFETs can be individually tuned with F-PSII dose to obtain the optimal X(j,SDE).

• 出版日期2010-8