Melting of Oxygen Vacancy Order at Oxide-Heterostructure Interface

作者：Hirai Kei; Aso Ryotaro; Ozaki Yusuke; Kan Daisuke; Haruta Mitsutaka; Ichikawa Noriya; Kurata Hiroki; Shimakawa Yuichi^*

来源：ACS Applied Materials & Interfaces, 2017, 9(35): 30143-30148.

DOI：10.1021/acsami.7b08134

• oxide heterostructure
• interface
• oxygen vacancy
• vacancy order
• epitaxial thin film

Modifications in oxygen coordination environments in heterostructures consisting of dissimilar oxides often emerge and lead to unusual properties of the constituent materials. Although lots of attention has been paid to slight modifications in the rigid oxygen octahedra of perovskite-based heterointerfaces, revealing the modification behaviors of the oxygen coordination environments in the heterostructures containing oxides with oxygen vacancies have been challenging. Here, we show that a significant modification in the oxygen coordination environments-melting of oxygen vacancy order-is induced at the heterointerface between SrFeO2.5 (SFO) and DyScO3 (DSO). When an oxygen-deficient perovskite (brownmillerite structure) SrFeO2.5 film grows epitaxially on a perovskite DyScO3 substrate, both FeO6 octahedra and FeO4 tetrahedra in the (101)-oriented SrFeO2.5 thin film connect to ScO6 octahedra in DyScO3. As a consequence of accommodating a structural mismatch, the alternately ordered arrangement of oxygen vacancies is significantly disturbed and reconstructed in the 2 nm thick heterointerface region. The stabilized heterointerface structure consists of Fe3+ octahedra with an oxygen vacancy disorder. The melting of the oxygen vacancy order, which in bulk SrFeO2.5 occurs at 1103 K, is induced at the present heterointerface at ambient temperatures.

• 出版日期2017-9-7