Low-temperature Silicon Oxynitridation Using a Hyper-thermal Neutral Beam (HNB)

作者：Kim Jongsik; Kim Dae Chul; Lee Bongju; Yoo Suk Jae^*; Lee Seong Eun; Park Young Chun

来源：Journal of the Korean Physical Society, 2011, 58(5): 1532-1535.

DOI：10.3938/jkps.58.1532

• Silicon oxynitride
• SiON
• Hyper-thermal neutral beam
• HNB
• Low temperature
• Plasma-induced damage

This study is to characterize silicon oxynitride (SiON) films grown for gate dielectric materials by using a hyper-thermal neutral beam (HNB) at a processing temperature of 400 degrees C. The HNB is drawing attention for manufacturing future nanoscale integrated circuits owing to its reducing the plasma-induced damage and the thermal budget. The HNB energy is controlled by using a surface neutralization plate bias voltage of -20 V. The electrical and the physical properties are measured with a metal-oxide silicon structure: capacitance-voltage (C-V) and current-voltage (I-V) characteristics analyses. As a result, the HNB SiON film leakage current is 1.0 x 10(-8) A/cm(2) at 6.5 MV/cm at a thickness of 6 similar to 7 nm, and the dielectric constant is about 4.7. These results support that the HNB is a method suitable for growing SiON films without the plasma-induced damage and without a heavy thermal budget.

• 出版日期2011-5