High-Speed, Enhancement-Mode GaN Power Switch With Regrown n plus GaN Ohmic Contacts and Staircase Field Plates

作者：Brown David F^*; Shinohara Keisuke; Corrion Andrea L; Chu Rongming; Williams Adam; Wong Joel C; Alvarado Rodriguez Ivan; Grabar Robert; Johnson Michael; Butler Colleen M; Santos Dayward; Burnham Shawn D; Robinson John F; Zehnder Daniel; Kim Samuel Jungjin; Oh Thomas C; Micovic Miroslav

来源：IEEE Electron Device Letters, 2013, 34(9): 1118-1120.

DOI：10.1109/LED.2013.2273172

• Dynamic ON-resistance
• enhancement-mode (E-mode)
• field plate
• GaN
• heterojunction field-effect transistor (HFET)
• molecular beam epitaxy (MBE) regrowth
• power switch

We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Omega mm), enhancement-mode operation (V-TH = +0.35 V), and excellent high-frequency performance (f(T)/f(max) = 50/120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.

• 出版日期2013-9