n( )-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal

作者：Wang, M C; Chang, T C^*; Tsao, S W; Chen, Y Z; Tseng, S C; Hsu, T C; Jan, D J; Ai, C F; Chen, J R

来源：Solid-State Electronics, 2011, 57(1): 73-75.

DOI：10.1016/j.sse.2010.12.016

• a-Si:H
• Thin film solar cell (TSFC)
• CuMg alloy

feasibility of using CuMg alloy as back contact metal for n(+)-doped-layer free a-Si:H thin film solar cell (TFSC) has been investigated in this work. The ohmic-contact characteristic has been achieved by using the CuMg alloy as back contact metal. The proposed structure showed the typical solar cell current-voltage (I-V) characteristic. An initial efficiency of 4.3% has been obtained with a open-circuit voltage V-oc = 0.79 V. short-circuit current J(sc) = 13.4 mA/cm(2) and fill factor F.F. = 0.40. Furthermore, the experimental results also showed the CuMg alloy was suitable for the replacement of n(+)-doped-layer with the production cost reduction of a-Si:H TSFC.

• 出版日期2011-3
• 单位清华大学; 中山大学