摘要
As CMOS devices scales to the nano ranges, increased short channel effects and process variations considerably affect device and circuit designs. Novel devices are been proposed to address these problems. As a promising new transistor, the Carbon Nanotube Field Effect Transistor (CNTFET) avoids most of the fundamental limitations of the traditional CMOS devices. In this paper, the MOSFET-like CNTFET is reviewed and shown as a promising device for high-performance and low-power memory designs. A 6T SRAM cell based on CNTFET is designed and simulated to show the improvements in stability, performance, and sensitivity on process variations compared to the CMOS 6T SRAM design.
- 出版日期2008
- 单位东北大学