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A New SRAM Cell Design Using CNTFETs
Lin Sheng
Kim Yong Bin
Lombardi Fabrizio
Lee Young Jun
International SoC Design Conference 2008, 2008-11-24 to 2008-11-25.
As CMOS devices scales to the nano ranges, increased short channel effects and process variations considerably affect device and circuit designs. Novel devices are been proposed to address these problems. As a promising new transistor, the Carbon Nanotube Field Effect Transistor (CNTFET) avoids most of the fundamental limitations of the traditional CMOS devices. In this paper, the MOSFET-like CNTFET is reviewed and shown as a promising device for high-performance and low-power memory designs. A 6T SRAM cell based on CNTFET is designed and simulated to show the improvements in stability, performance, and sensitivity on process variations compared to the CMOS 6T SRAM design.
Carbon Nanotube Field Effect Transistor; SRAM design; high performance; low power
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