科研之友
微信
新浪微博
Facebook
分享链接
摘要
The complex permittivity of high-purity, semi-insulating, axis-aligned monocrystalline 4H-SiC has been determined over the frequency range 10-40 GHz and at temperatures from 40 up to 295 K using whispering gallery modes and quasi TE0,n,p modes in a dielectric resonator constructed from seven layers of a 375 mu m thick wafer. The real part of the permittivity (in the plane of the wafers) was found to be nearly independent of frequency. The dielectric loss tangent of 4H-SiC increases with temperature above 100 K. All results were obtained for the semiconductor in darkness.
- 出版日期2011-3-15
