A 6-bit 3-Gsps ADC implemented in 1μ m GaAs HBT technology

作者:张金灿; 张玉明; 吕红亮; 张义门; 肖广兴; 叶桂平
来源:Chinese Journal of Semiconductors, 2014, 35(08): 149-154.
DOI:10.1088/1674-4926/35/8/085005

摘要

The design and test results of a 6-bit 3-Gsps analog-to-digital converter(ADC) using 1 m GaAs heterojunction bipolar transistor(HBT) technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier(THA) with a highly linear input buffer to maintain a highly effective number of bits(ENOB). The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.1 GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB,respectively.

全文