Memristive properties of In2O3/LaNiO3 heterostructures grown by pulsed laser deposition

作者：Mistry B V^*; Pinto R; Joshi U S

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(2): 1812-1816.

DOI：10.1007/s10854-015-3958-3

Resistance switching properties of nanostructured In2O3 films grown on LaNiO3 (LNO) bottom electrode (BE) have been investigated for non volatile memory applications. Ag/In2O3/LNO/SiO2 heterostructures were fabricated by pulsed laser deposition. Polycrystalline growth of oxides LNO and In2O3 was confirmed by GIXRD, while AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible two distinct resistance states in the film and unipolar type switching. Typical resistance switching ratio (R (on) /R (off) ) of the order of 112 % has been estimated at room temperature. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/In2O3 top interface, whereas the LNO BE acts as oxygen reservoir at the In2O3/LNO interface.

• 出版日期2016-2