Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE

作者：Nishinaka Hiroyuki^*; Fujita Shizuo

来源：Journal of Crystal Growth, 2008, 310(23): 5007-5010.

DOI：10.1016/j.jcrysgro.2008.07.007

• Surface structure
• Metalorganic vapor phase epitaxy
• Oxide
• Zinc compounds

Homoepitaxial zinc oxide thin films with atomically flat surfaces have successfully been grown on Zn-polar (0 0 0 1) ZnO substrates with the step-flow growth mode by ultrasonic spray-assisted metalorganic vapor phase epitaxy. The Surfaces of the grown layers were composed of terraces and steps, where the step height was mainly 0.26 nm originated from half of a c-axis lattice parameter of hexagonal ZnO crystal, at the optimizing growth conditions. The step-flow growth required the higher growth temperature (for example, at 950 degrees C), while at lower temperatures (for example, at 875 degrees C) the growth mode was a mixture of layer-by-layer and step-flow growths. In order for the step-flow growth maintaining the monolayer steps, the miscut angles of substrates should be so small that the terrace lengths were about 200 nm or more in our experimental conditions.

• 出版日期2008-11-15