A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

作者：Pristavu G^*; Brezeanu G; Badila M; Pascu R; Danila M; Godignon P

来源：Applied Physics Letters, 2015, 106(26): 261605.

DOI：10.1063/1.4923468

Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformity is proposed. A Schottky contact surface with double Schottky barrier is considered. The main model parameters are the lower barrier (Phi(Bn,l)) and a p factor which quantitatively evaluates the barrier non-uniformity on the Schottky contact area. The model is validated on Ni/4H-SiC Schottky contacts, post metallization sintered at high temperatures. The measured I-F-V-F-T characteristics, selected so as not to be affected by interface states, were used for model correlation. An inhomogeneous double Schottky barrier (with both nickel silicide and Ni droplets at the interface) is formed by a rapid thermal annealing (RTA) at 750 degrees C. High values of the p parameter are obtained from samples annealed at this temperature, using the proposed model. A significant improvement in the electrical properties occurs following RTA at 800 degrees C. The expansion of the Ni2Si phase on the whole contact area is evinced by an X-Ray diffraction investigation. In this case, the p factor is much lower, attesting the uniformity of the contact. The model makes it possible to evaluate the real Schottky barrier, for a homogenous Schottky contact. Using data measured on samples annealed at 800 degrees C, a true barrier height of around 1.73V has been obtained for Ni2Si/4H-SiC Schottky contacts.

• 出版日期2015-6-29