A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT)

作者:Tsai Jung Hui*; Lee Ching Sung; Lour Wen Shiung; Ma Yung Chun; Ye Sheng Shiun
来源:Semiconductors, 2011, 45(5): 646-649.
DOI:10.1134/S1063782611050137

摘要

Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz. DOI: 10.1134/S1063782611050137

  • 出版日期2011-5