Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

作者：Vincent B^*; Gencarelli F; Bender H; Merckling C; Douhard B; Petersen D H; Hansen O; Henrichsen H H; Meersschaut J; Vandervorst W; Heyns M; Loo R; Caymax M

来源：Applied Physics Letters, 2011, 99(15): 152103.

DOI：10.1063/1.3645620

• annealing
• chemical interdiffusion
• chemical vapour deposition
• germanium alloys
• Hall mobility
• hole mobility
• semiconductor doping
• semiconductor epitaxial layers
• semiconductor growth
• semiconductor materials
• tin alloys

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations.

• 出版日期2011-10-10