Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes

作者：Sadaf S M; Ra Y H; Nguyen H P T; Djavid M; Mi Z

来源：Nano Letters, 2015, 15(10): 6696-6701.

DOI：10.1021/acs.nanolett.5b02515

• Nanowire
• quantum dot
• GaN
• light emitting diode
• tunnel junction
• AC LED

The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

• 出版日期2015-10