A Quantitative Analysis of DICE SRAM SEU Caused by Heavy Ion Elastic Scattering

作者：Zhu Ming^*; Zhu Hengjing; Zhang Wei; Yu Qingkui; Tang Min

来源：IEEE Transactions on Nuclear Science, 2016, 63(4): 2363-2371.

DOI：10.1109/TNS.2016.2570425

• DICE
• Monte Carlo simulation
• NRED
• single event upset
• TCAD simulation

A 4 Mbit DICE latch SRAM exhibits single event upset(SEU) cross-section of 10(14)-10(12) cm(2)/bit in vertically incident heavy-ion beam tests. TCAD simulations show that the DICE latch works, and that the SEU is not caused by charge sharing. Numerical simulations on particle elastic collision gives quantitative evidence that it is caused by elastic scattering between the incident ion and target nucleus. Three scenarios of elastic scattering SEU are calculated separately in order to get a deeper understanding. The upset cross-section's dependencies on ion energy, incident angle and the distance between DICE nodes are analyzed. A designing suggestion that paired nodes of DICE latch should be at least 6 mu m away is firstly presented.

• 出版日期2016-8
• 单位中国空间技术研究院