Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

作者：Chen, Guan Fu; Chang, Ting Chang^*; Chen, Hua Mao; Chen, Bo Wei; Chen, Hong Chih; Li, Cheng Ya; Tai, Ya Hsiang; Hung, Yu Ju; Chang, Kuo Jui; Cheng, Kai Chung; Huang, Chen Shuo; Chen, Kuo Kuang; Lu, Hsueh Hsing; Lin, Yu Hsin

来源：IEEE Electron Device Letters, 2017, 38(3): 334-337.

DOI：10.1109/LED.2017.2657546

• Top gate TFTs
• indium gallium zinc oxide (IGZO)
• dual channel
• hump

This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.

• 出版日期2017-3
• 单位中山大学