A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping

作者：Gardelis S^*; Nassiopoulou A G; Manousiadis P; Vouroutzis N; Frangis N

来源：Applied Physics Letters, 2013, 103(24): 241114.

DOI：10.1063/1.4846595

We fabricated a silicon-wafer based p-n junction solar cell with conversion efficiency of 11% without conventional doping of the emitter or the use of anti-reflecting coatings. The emitter was originally nanocrystalline, grown on n-type crystalline Si and covered with a thin semi-transparent Al layer. Annealing in nitrogen at 430 degrees C promoted a simultaneous aluminum (Al)-induced recrystallization and Al-doping of the emitter. The recrystallized emitter consisted of considerably larger Si grains which were epitaxially crystallized on the Si substrate. These two effects led to a considerable improvement of the electrical and photovoltaic properties of the resulting p-n junction.

• 出版日期2013-12-9