科研之友
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摘要
A compact drain current model of amorphous In-Ga-Zn-O thin-film transistors based on terms of surface potential is presented in this letter. An explicit and closed-form scheme for the surface potential calculation is developed by including both exponential deep and tail states. With the effective charge density approach, the resulting dc and surface potential models give accurate descriptions with single-piece formulas, which are suitable for CAD applications. The proposed models are verified by both the numerical simulation and experimental result, and a good agreement is achieved over a wide range of operation regions.
- 出版日期2014-1
- 单位暨南大学
