Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures

作者：Zimin S P^*; Gorlachev E S; Amirov I I; Naumov V V; Bagiyeva G Z

来源：Semiconductor Science and Technology, 2015, 30(3): 035017.

DOI：10.1088/0268-1242/30/3/035017

• plasma sputtering
• nanostructures
• vapour-liquid-solid mechanism
• lead telluride
• single crystal
• point defects
• redeposition

This paper reports the investigations of the sputtering process of (111) oriented single crystals of PbTe with excess tellurium (4 at.%) in RF high-density low-pressure inductively coupled argon plasma. An increase of 1.6 times the sputtering rate of lead telluride in comparison with the classical case of single-crystal state with a slight deviation from stoichiometry is shown and the explanation of the results is carried out based on the analysis of the crystal point defects. The active sputtering is used in a new approach to form lead telluride nanostructures on oxidized Si substrates via the vapour-liquid-solid (VLS) redeposition mechanism, and the fabrication of PbTe nanocones, nanocubes and nanowires with various geometrical parameters is demonstrated.

• 出版日期2015-3