科研之友
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摘要
In this work, we demonstrate the fabrication of a transparent and flexible memory device in the simple structure of metal/dielectric/metal (MIM). Here, the MIM structure consists of gold electrode/200 nm Parylene-C/20 nm gold nanoparticles/100 nm Parylene-C/indium-tin-oxide (ITO) coated polyethylene terephthalate (PET). The use of parylene as the dielectric layer is important to ensure that there is no thermal stress induced on the flexible ITO/PET substrate compare to other reported works using various organic dielectrics that require high temperature curing. In addition, parylene deposition does not disturb the drop-casted gold nanoparticles. Hence, the use of parylene will be the right step forward in the fabrication of mechanically flexible and optically transparent devices. Current versus voltage (I-V) plot shows the presence of hysteresis suggesting the charge storage capability as a memory device. In the I-V plot, three distinct regions based on the slope have been identified and the transport mechanisms are discussed and explained. The fabricated device shows similar behavior as write-once-read-many memory device and can be programmed with either positive or negative bias voltage. However, the memory device shows unstable current state when being bent under different curvature diameters.
- 出版日期2013-8
