Asymmetry study and improvement base on BSIM4 model

作者：Li, Bin^*; Pan, Yuanzhen; Xu, Yuebin

来源：Journal of Huazhong University of Science and Technology (Natural Science Edition), 2013, 41(1): 102-105.

• Berkeley short-channel igfet models
• Carrier saturation
• Design and simulation
• Intergrated cricuit
• Radio frequencies
• Simulation
• Source-drain voltage
• Symmetric channels

On the basis of BSIM4 (Berkeley short-channel IGFET model 4) model, the asymmetry in the BSIM4 models was analyzed. From some aspects, including the channel charge density, effective source-drain voltage, carrier saturation velocity and threshold voltage, the factors that lead to the asymmetry in the BSIM4 models were identified, and the symmetric channel charge density formula, effective source-drain voltage formula, carrier saturation velocity formula were developed. By calculating in the source side and drain side respectively, the asymmetry due to the unparallel dealing with the source voltage and the drain voltage was eliminated. Finally, symmetrical channel current formula was deduced. It is verified that the improved model not only simulates devices accurately, but also is more symmetric. The improved model expands the application scope of the BSIM4 models which can be applied efficiently in the RF (radio frequency) design and simulation.

• 出版日期2013-1
• 单位华南理工大学