As-Ga(+) antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

作者：Stesmans A^*; Nguyen S; Afanas'ev V V

来源：Applied Physics Letters, 2013, 103(16): 162111.

DOI：10.1063/1.4824881

Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350-615 degrees C on both powders and slices of semi-insulating (100) GaAs. This compellingly reveals substantial generation (density similar to 1 x 10(13) cm(-2)) of interfacial As-75(Ga)+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of As-Ga, direct identification is thus established of a major system of detrimental interface traps.

• 出版日期2013-10-14